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2025 Third Generation Semiconductor Technology and Application Forum
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Topics:
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Forum Agenda
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On site photos of the forum
2025 Third Generation Semiconductor Technology and Application Forum
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Forum Date
Apr 16, 2025
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Forum Venue
Room M46 (2nd floor) in Hall N4, SNIEC
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Organizer
Power Supply Network
Messe Muenchen Shanghai Co., Ltd.


Topics:
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Technical development of new power devices
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Development and characteristics of wide band gap devices
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Application of new power devices
Forum Agenda
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Time
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Presentation
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Speaker
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9:00-10:00
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Registration
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10:00-10:30
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Research on 6-8 Inch GaN+Si CMOS Monolithic Heterogeneous Integration and Platformization Devices
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Huang Wei, Professor at the School of Integrated Circuits, Jiangnan University
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10:30-11:00
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Application of WBG Technology in Motor Drives
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Winter Cheng,Marketing Director & GaN Champion, Consumer, Computing & Communication, Infineon Technologies Greater China
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11:00-11:30
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ST Power Device for Motor Control Application
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Jerry LI, Technical Marketing Manager, Power Discrete and Sub-Analog, China, STMicroelectronics
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11:30-12:00
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Practical Applications of Nano Probes in Chip Failure Analysis
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Chua Kok Keng, Technical Director, Wintech Nano (Suzhou) Co., Ltd.
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13:30-14:00
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Manufacturing and Testing Technologies of GaN Power Devices
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Huang Huolin, Professor and Doctoral Supervisor at Dalian University of Technology
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14:00-14:30
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Dynamic Reliability Testing Challenges and Solutions for SiC MOSFET from Wafer Level to Device Level
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Saijun Mao, Founder, UniSic Technology(Shanghai) co., Ltd.
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14:30-15:00
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Opportunities and Challenges in the Era of Silicon Carbide Wide Application
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Li Guohu, Industrial Marketing Director, Sales and Marketing Department, United Nova Technology Co., Ltd.
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15:00-15:30
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Encounter with Wide Bandgap Materials
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Minfan Fu,Researcher and Doctoral Supervisor at School of Information Science and Technology,ShanghaiTech University
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The agenda of conference shall be subject to the announcement on that day.
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